unisonic technologies co., ltd up9972 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r502-372.a n-channel enhancement mode ? description the utc up9972 is an n-ch enhancement mode power mos field effect transistor using advanced technology to provide fast speed switching, low on-resistanc e and perfect cost-effectiveness. the utc up9972 is ideal for commercial-industrial surface mount applications applied to dc/dc c onverters or other low voltage applications. ? features * single drive required * fast switching capability * ultra low gate charge * halogen free ? symbol (1) source 2. gate (3) drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing up9972l-ta3-t UP9972G-TA3-T to-220 g d s tube
up9972 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-372.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 25 v continuous drain current (v gs =10v, t c =25c) i d 60 a pulsed drain current (note 2) i dm 230 a avalanche current (note 3) i ar 30 a single pulse avalanche energy (note 3) e as 45 mj power dissipation (t c =25c) p d 89 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. 2. pulse width limited by t j(max) 3. l = 100 h, v dd =30v, i as =30a, r g =25 ? , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient ja 62 c/w junction to case jc 1.4 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250 a 60 v breakdown voltage temperature coefficient j dss t bv reference to 25c, i d =1ma 0.06 v/c drain-source leakage current i dss v ds =60v, v gs =0v 10 a gate-source leakage current i gss v gs = 25v, v ds =0v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1 3 v v gs =10v, i d =35a 18 m ? drain to source on-state resistance (note) r ds(on) v gs =4.5v, i d =25a 22 m ? dynamic parameters input capacitance c iss 3170 5070 pf output capacitance c oss 280 pf reverse transfer capacitance c rss v gs =0v,v ds =25v, f=1.0mhz 230 pf gate resistance r g f=1.0mhz 1.7 ? switching parameters turn-on delay time (note) t d(on) 11 ns turn-on rise time t r 58 ns turn-off delay time t d(off) 45 ns turn-off fall-time t f v ds =30v, v gs =10v , i d =35a r g =3.3 ? , r d =0.86 ? 80 ns total gate charge (note) q g 32 51 nc gate source charge q gs 8 nc gate drain charge q gd i d =35a, v ds =48v, v gs =4.5v 20 nc source- drain diode ratings and characteristics drain-source diode forward voltage (note) v sd i s =35a, v gs =0v 1.2 v reverse recovery time (note) t rr 50 ns reverse recovery charge q rr i s =35a, v gs =0v di/dt=100a/s 48 nc note: pulse test
up9972 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-372.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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